Datasheet search engine for electronic components and semiconductors. Diode gen purpose 50v 1a do41 online from elcodis, view and download 1n4001 pdf datasheet, diodes, rectifiers single specifications. Fcpf16n60 mosfet nchan 600v 16a to220f fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Please note the new package dimensions arccording to pcn. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current.
O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Semiconductor reserves the right to make changes at any time without notice in order to improve design. This advanced technology has been especially tailored to minimize. B1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchilds ufd series of insulated gate bipolar transistors igbts provides low conduction and switching losses. Ic60n datasheet, cross reference, circuit and application notes in pdf format. Extremely high dvdt capability 100% avalanche tested verylow intrinsiccapacitances gatecharge minimized description this power mosfet is designed using the companysconsolidatedstrip layoutbasedmesh. Fqp8n60cfqpf8n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for. Ultralow v cesat igbt ixgn 60n60 v ces 600 v i c25 100 a v cesat 1. This data sheet provides information on subminiature size, axial lead mounted rectifiers for general. This data sheet provides information on subminiature size, axial lead mounted.
Jun 26, 2017 g80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as. Id 20 a feature new revolutionary high voltage technology ultra. Monolithic linear ic la78045 tv and crt display vertical support. May 09, 2016 g60n100 datasheet v, 60a, npt trench igbt fairchild, fgl60n100bntd datasheet, g60n100 pdf, g60n100 pinout, g60n100 circuit, g60n100 schematic. En7881a monolithic linear ic tv and crt display vertical output ic with bus control support. G60n100 datasheet v, 60a, npt trench igbt fairchild. The utc is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche characteristics. Please note the new package dimensions arccording to pcn 2009. The ufd series is designed for applications such as motor. Absolute ratings limiting values symbol parameter value unit vrrm repetitive peak reverse voltage 300 v ifrms rms forward voltage 80 a ifav average forward current 40 a ifrm repetitive peak forward current f 200khz, tp 500ns sinusoidal waveform. Preferred device axial lead rectifier these devices employ the schottky barrier principle in a large area metal.
Utc 10 amps, 600650 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Germanium diodes 1 cold bonded germanium diodes in do7 package mm type aa1 aa117 aa118 aa119 aa8 aa143 aa144 aaz15 aaz17 aaz18 oa47 oa79 oa90 oa91 oa95 oa99 1n34a 1n38a 1n60a 1n100a 1n27q 1n276 1n277 1n695 1n695a 1n933 1n949 1n3287 1n3592 1n3666 1n3773 peak inverse voltage min. R ge 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c 25 c 100 a i c90 t c 90 c60a i cm t c 25 c, 1 ms 200 a ssoa v ge 15 v, t vj 125 c, r g. Apr 04, 2015 4n60b datasheet pdf download pdf 2249741219049103. N electrical characteristics tc 25c, unless otherwise specified parameter symbol test conditions min typ max unit. Germanium glass diode 1n601n60p taitron components. Recent listings manufacturer directory get instant insight into any electronic component. G60n100 datasheet v, 60a, npt trench igbt fairchild, fgl60n100bntd datasheet, g60n100 pdf, g60n100 pinout, g60n100 circuit, g60n100 schematic. Parameters provided in datasheets and or specifications may vary in different ap plications and perfor mance may vary over. Datasheet contains the design specifications for product development. Stb28n60m2, stp28n60m2, stw28n60m2 nchannel 600 v, 0. Fqa24n60 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology.
Absolute ratings limiting values symbol parameter value unit vrrm repetitive peak reverse voltage 300 v ifrms rms forward voltage 80 a ifav average forward current 40 a ifrm repetitive peak forward current f 200khz, tp 500ns sinusoidal waveform 120 a tstg storage temperature range 65. Fgh60n60sfd 600v, 60a field stop igbt package marking and ordering information electrical characteristics of the igbt tc 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgh60n60sfd fgh60n60sfdtu to247 tube 30ea symbol parameter test conditions min. Aot11n60laotf11n60laotf11n60 600v,11a nchannel mosfet general description product summary v ds id at v gs 10v 11a r dson at v gs 10v sheet, datasheet, data sheet, pdf. A listing of on semiconductors productpatent coverage may be accessed at.
Ordering information note 4 device packaging shipping. G80n60 datasheet vces 660v, ultrafast igbt fairchild. For details about parts other than 1n5719 click on the desired part number in the parts list at the bottom of this page. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. View 1n4001 thru 1n4007 datasheet from vishay semiconductor diodes division at digikey. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Apr 04, 2015 4n60 datasheet pdf 4n60 datasheet pdf 4n60 datasheet pdf download. I absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v continuous id 20 a drain current pulsed idm 80 a avalanche energy single pulsednote 2 eas 1200 mj to247 370. Part number top mark package reel size tape width quantity fqp7n80c fqp7n80c to220 na na 50 units packing method tube fqpf7n80c fqpf7n80c to220f tube na na 50 units notes. Id 20 a feature new revolutionary high voltage technology ultra low gate charge. Fcpf11n60 mosfet nchan 600v 11a to220f fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev.
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